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    Home/    Category/    FET, MOSFET/    FDC6561AN

    MOSFET 2N-CH 30V 2.5A SSOT6 FDC6561AN

    FDC6561AN image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FDC6561AN
    Description:
    MOSFET 2N-CH 30V 2.5A SSOT6
    Stock:
    16521
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.11
    The market price fluctuates. Please consult the customer service for the actual price
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    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    2.5A
  • Drain source voltage (Vdss)
    30V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    3.2nC @ 5V
  • Input capacitance at different Vds (Ciss) (maximum)
    220pF @ 15V
  • On resistance (maximum) for different Ids and Vgs
    95 mΩ @ 2.5A,10V
  • Power - maximum
    700mW
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA
  • packing
    TR,CT
  • series
    PowerTrench®
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    SOT-23-6 ,TSOT-23-6
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    FDC6561AN（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16521,Price reference "real-time change" China/Hongkong。 FDC6561AN package/specs, Download FDC6561AN、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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